Gate oxide wear-out and breakdown effects on the performance of analog and digital circuits

IEEE Transactions on Electron Devices

Volumn 55, Issue 4, 2008, Pages 997-1004

  Fernández, Raul ^a   Martin Martinez J ^a   Rodriguez R ^a   Nafria M ^a   Aymerich, Xavier H ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

Complimentary metal oxide semiconductor (CMOS); Dielectric breakdown (BD); Hard BD (HBD); Oxide reliability

Indexed keywords

ANALOG CIRCUITS; CIRCUIT SIMULATION; DIGITAL CIRCUITS; ELECTRIC BREAKDOWN; LEAKAGE CURRENTS;

GATE OXIDE DEGRADATION;

CMOS INTEGRATED CIRCUITS;

EID: 41949086011     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.917334     Document Type: Article

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