MOSFET output characteristics after oxide breakdown

Microelectronic Engineering

Volumn 84, Issue 1, 2007, Pages 31-36

  Fernandez R ^a   Rodriguez R ^a   Nafria M ^a   Aymerich, X ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

Circuit simulation; CMOS; Dielectric breakdown; Hard breakdown; Leakage currents; MOSFET; Oxide breakdown; Oxide reliability

Indexed keywords

ASPECT RATIO; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; GATES (TRANSISTOR); LEAKAGE CURRENTS; SILICA;

CIRCUIT SIMULATION; CIRCUIT SIMULATORS; DIELECTRIC BREAKDOWN (BD); DRAIN CURRENT; GATE CURRENT;

MOSFET DEVICES;

EID: 33751401511     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.08.001     Document Type: Article

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