Effect of oxide breakdown on RS latches

Microelectronics Reliability

Volumn 47, Issue 4-5 SPEC. ISS., 2007, Pages 581-584

  Fernandez R ^a,b   Rodriguez R ^a   Nafria M ^a   Aymerich, X ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b Generalitat de Catalunya   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC NETWORK TOPOLOGY; MOSFET DEVICES; SPURIOUS SIGNAL NOISE; SWITCHING NETWORKS; TRANSISTORS;

DAMAGED TRANSISTORS; GATE CURRENTS; NOISE MARGIN; SWITCHING TIMES;

FLIP FLOP CIRCUITS;

EID: 34247326090     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2007.01.021     Document Type: Article

References (8)

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