Influence of MOS transistor gate oxide breakdown on circuit performance

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

Volumn , Issue , 1998, Pages 59-63

  Yeoh, Teong San ^a   Hu, Shze Jer ^a  

^a Intel Technology Malaysia Sdn Bhd   (Malaysia)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER AIDED NETWORK ANALYSIS; COMPUTER SIMULATION; DIFFUSION IN SOLIDS; ELECTRIC BREAKDOWN OF SOLIDS; GATES (TRANSISTOR); OXIDES; PHOSPHORUS; SEMICONDUCTOR DOPING; SILICON WAFERS;

GATE OXIDE BREAKDOWN;

MOSFET DEVICES;

EID: 0032231207     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (2)