RF circuit performance degradation due to soft breakdown and hot carrier effect in 0.18 μm CMOS technology

IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

Volumn , Issue , 2001, Pages 139-142

  Li, Q ^a   Zhang, J ^a   Li, W ^a   Yuan, J S ^a   Chen, Y ^a   Oates, A S ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); CARRIER MOBILITY; COMPUTER SIMULATION; ELECTRIC BREAKDOWN; GATES (TRANSISTOR); HOT CARRIERS; INTEGRATED CIRCUIT LAYOUT; MOSFET DEVICES; SILICON WAFERS; SPURIOUS SIGNAL NOISE; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

CIRCUIT DEGRADATION; LOW NOISE AMPLIFIER; RADIO FREQUENCY INTEGRATED CIRCUITS; SOFT OXIDE BREAKDOWN;

CMOS INTEGRATED CIRCUITS;

EID: 0034863323     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

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9. Ultra-thin gate dilectrics: They, break down, but do they fall