Analytic model for the post-breakdown conductance of sub-5-nm SiO2 gate oxides

IEEE Electron Device Letters

Volumn 26, Issue 9, 2005, Pages 673-675

  Miranda, Enrique ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

Breakdown; MOS; Reliability

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CONDUCTANCE; ELECTRODES; GATES (TRANSISTOR); MOS DEVICES; QUANTUM THEORY; RELIABILITY; SEMICONDUCTING SILICON COMPOUNDS; SILICA;

GATE OXIDES; POST-BREAKDOWN CONDUCTANCE; SEMICONDUCTOR ELECTRODES;

SEMICONDUCTOR DEVICE MODELS;

EID: 26444504084     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.853634     Document Type: Article

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