Incidence of oxide and interface degradation on MOSFET performance

Microelectronic Engineering

Volumn 72, Issue 1-4, 2004, Pages 66-70

  Cester, A ^a   Bandiera, L ^a   Cimino, S ^a   Paccagnella, A ^a   Ghidini, G ^b  

^a UNIVERSITY OF PADOVA   (Italy)

^b STMICROELECTRONICS   (Italy)

Author keywords

Accelerated lifetests; CMOS devices; Oxide reliability

Indexed keywords

CARRIER MOBILITY; CMOS INTEGRATED CIRCUITS; DEGRADATION; ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY; ELECTRON TRAPS; GATES (TRANSISTOR); INTERFACES (MATERIALS); LEAKAGE CURRENTS; OXIDE SUPERCONDUCTORS;

ACCELERATED LIFETESTS; CMOS DEVICES; OXIDE RELIABILITY;

MOSFET DEVICES;

EID: 1642634446     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2003.12.018     Document Type: Conference Paper

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