Lifetime estimation of analog circuits from the electrical characteristics of stressed MOSFETs

Microelectronics Reliability

Volumn 47, Issue 9-11 SPEC. ISS., 2007, Pages 1349-1352

  Martin Martinez J ^a   Gerardin, S ^b   Rodriguez R ^a   Nafria M ^a   Aymerich, X ^a   Cester, A ^b   Paccagnella, A ^b   Ghidini, G ^c  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b UNIVERSITY OF PADOVA   (Italy)

^c STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANALOG CIRCUITS; ELECTRIC CURRENTS; ELECTRIC PROPERTIES; EXTRAPOLATION; THRESHOLD VOLTAGE; TRANSISTORS;

DIELECTRIC DEGRADATION; FOWLER-NORDHEIM (FN) STRESS; INTERFACE TRAP DENSITY; WEAR OUT EFFECTS;

MOSFET DEVICES;

EID: 34548704303     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2007.07.088     Document Type: Article

References (7)

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4. Gerardin S., Cester A., Paccagnella A., and Ghidini G. MOSFET drain current reduction under Fowler-Nordheim and channel hot carrier injection before gate oxide breakdown. Mater Sci Semicond Proc 7 (2004) 175-180
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