Worn-out oxide MOSFET characteristics: Role of gate current and device parameters on a current mirror

Microelectronics Reliability

Volumn 47, Issue 4-5 SPEC. ISS., 2007, Pages 665-668

  Martin Martinez J ^a   Rodriguez R ^a   Nafria M ^a   Aymerich, X ^a   Stathis, J H ^a,b  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b IBM RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; GATES (TRANSISTOR);

CHANNEL TRANSISTORS; CIRCUIT SIMULATORS; CURRENT MIRRORS;

MOSFET DEVICES;

EID: 34247092881     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2007.01.035     Document Type: Article

References (6)

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3. Rodríguez R., et al. IEEE Electron Dev Lett 24 2 (2003) 114-116
4. Cester A et al. In: IRPS proceedings, 2003. p. 189-95.
5. http://www.synopsys.com/products/mixedsignal/aurora_ds.html.
6. Miranda E., et al. IEEE Electron Dev Lett 20 (1999) 265-267