DC broken down MOSFET model for circuit reliability simulation

Electronics Letters

Volumn 41, Issue 6, 2005, Pages 368-370

  Fernandez R ^a   Rodriguez R ^a   Nafria M ^a   Aymerich, X ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; ELECTRIC INVERTERS; EQUIVALENT CIRCUITS; SHORT CIRCUIT CURRENTS;

CIRCUIT SIMULATORS; DIELECTRIC BREAKDOWN; POWER LAW MODEL; SPICE SIMULATORS;

MOSFET DEVICES;

EID: 16244415902     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20057422     Document Type: Article

References (10)

1. Rodriguez, R., et al.: 'The impact of gate oxide breakdown on SRAM stability', IEEE Electron Device Lett., 2002, 23, (9), pp. 559-561
2. Kaczer, B., et al.: 'Impact MOSFET gate oxide breakdown on digital circuit operation and reliability', IEEE Trans. Electron Devices, 2002, 49, (3), pp. 500-506
3. Yeoh, T.S.: 'Influence of MOS transistor gate oxide breakdown on circuit performance'. IEEE Int. Conf. on Semiconductor Electronics, 1998 pp. 59-63
4. Cester, A., et al.: 'Collapse of MOSFET drain current after soft breakdown and its dependence on the transistor aspect ratio W/L'. Proc. IRPS, 2003pp. 189-195
5. Pompl, T., et al.: 'Influence of soft breakdown on NMOSFET device characteristics'. Proc. IRPS, 1999, pp. 82-87
6. Yang, H., Yuan, J.S., and Xiao, E.: 'Effect of gate oxide breakdown on RF device and circuit performance'. Proc. IRPS, 2003, pp. 1-4
7. Sakurai, T., and Newton, A.R.: 'A simple MOSFET model for circuit analysis', IEEE Trans. Electron Devices, 1991, 38, (4).
8. Rodríguez, R., Stathis, J.H., and Linder, B.P.: 'A model for gate oxide breakdown in CMOS inverters', IEEE Electron Device Lett., 2003, 24, (2), pp. 114-116
9. Miranda, E., et al.: 'A function-fit model for the soft breakdown failure mode', IEEE Electron Device Lett., 1999, 20, pp. 265-267
10. Degraeve, R., et al.: 'Relation between breakdown mode and breakdown location in short channel nMOSFETs and its impact on reliability specifications'. Proc. IRPS, 2001, pp. 360-366