A 3-D analytical physically based model for the subthreshold swing in undoped trigate FinFETs

IEEE Transactions on Electron Devices

Volumn 54, Issue 9, 2007, Pages 2487-2496

  El Hamid, Hamdy Abd ^a   Guitart, Jaume Roig ^b   Kilchytska, Valeria ^c   Flandre, Denis ^c   Iñiguez, Benjamin ^a  

^a UNIVERSITAT ROVIRA I VIRGILI   (Spain)

^b CNRS   (France)

^c UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

Author keywords

3 D Poisson's equation; Conduction path; Semiconductor device modeling; Subthreshold swing; Undoped FinFET

Indexed keywords

NUMERICAL METHODS; POISSON EQUATION; SEMICONDUCTOR DEVICE MODELS; THREE DIMENSIONAL;

CONDUCTION PATH; SUBTHRESHOLD SWING;

FIELD EFFECT TRANSISTORS;

EID: 41749105329     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.902415     Document Type: Article

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