A sub-40nm body thickness N-type FinFET

Annual Device Research Conference Digest

Volumn , Issue , 2001, Pages 24-25

  Fried, D M ^a   Johnson, A P ^a   Nowak, E J ^a   Rankin, J H ^a   Willets, C R ^a  

^a IBM Microelectronics Division   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC INSULATORS; ELECTRON MOBILITY; SILICON WAFERS; TRANSCONDUCTANCE;

SILICON PROBE;

MOSFET DEVICES;

EID: 0034860289     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. A fully depleted lean-channel trarnsistor (DELTA)
2. A folded-channel MOSFET for deep-sub-tenth micron era
3. Sub 50-nm FinFET
4. On the universality of inversion layer mobility in Si MOSFET's: Part II-Effects of surface orientation