MOSFET scaling into the 10 nm regime

Superlattices and Microstructures

Volumn 28, Issue 5-6, 2000, Pages 351-355

  Chang, Leland ^a   Hu, Chenming ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TUNNELING; MOSFET DEVICES; QUANTUM THEORY; THERMIONIC EMISSION; THRESHOLD VOLTAGE;

MOSFET SCALING; QUANTUM MECHANICAL TUNNELING; SHORT CHANNEL EFFECTS;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0034314890     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.2000.0933     Document Type: Article

References (8)

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