Accurate effective mobility extraction by split C-V technique in SOI MOSFETs: Suppression of the influence of floating-body effects

IEEE Electron Device Letters

Volumn 26, Issue 10, 2005, Pages 749-751

  Kilchytska, Valeriya ^a   Lederer, Dimitri ^a   Collaert, Nadine ^b   Raskin, Jean Pierre ^a   Flandre, Denis ^a  

^a UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

^b IMEC   (Belgium)

Author keywords

Capacitance measurements; Charge carrier mobility; Floating body effects; MOSFETs; Semiconductor device measurements; Silicon on insulator (SOI) technology

Indexed keywords

CAPACITANCE MEASUREMENT; CARRIER MOBILITY; CHARGE CARRIERS; CURRENT VOLTAGE CHARACTERISTICS; POLYSILICON; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

CHARGE CARRIER MOBILITY; FLOATING-BODY EFFECTS; SEMICONDUCTOR DEVICE MEASUREMENTS;

MOSFET DEVICES;

EID: 27144463712     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.855408     Document Type: Article

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