Two-dimensional analytical threshold voltage roll-off and subthreshold swing models for undoped cylindrical gate all around MOSFET

Solid-State Electronics

Volumn 50, Issue 5, 2006, Pages 805-812

  Abd Elhamid, Hamdy ^a   Iñiguez, Benjamin ^a   Jiménez, David ^b   Roig, Jaume ^c   Pallarès, Josep ^a   Marsal, Lluís F ^a  

^a UNIVERSITAT ROVIRA I VIRGILI   (Spain)

^b UNIVERSITAT POLITÈCNICA DE CATALUNYA   (Spain)

^c LAAS CNRS   (France)

Author keywords

Device modeling; Downscaling; Gate all around; MOSFET; Subthreshold swing; Surrounding gate MOSFET; Threshold voltage

Indexed keywords

COMPUTER SIMULATION; GATES (TRANSISTOR); MATHEMATICAL MODELS; POISSON EQUATION; THRESHOLD VOLTAGE;

DEVICE MODELING; DOWNSCALING; GATE ALL AROUND; SUBTHRESHOLD SWING; SURROUNDING GATE MOSFET;

MOSFET DEVICES;

EID: 33744925387     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.04.020     Document Type: Article

References (31)

1. The International Technology Roadmap for Semiconductors (2001). Available from: .
2. Oh S.-H., Monroe D., and Hergenrother J.M. Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs. IEEE Electron Dev Lett 21 9 (2000) 45-447
3. Sze S.M. Physics of semiconductor devices. second ed. (1981), Wiley, New York
4. Taur Y. Analytic solutions of charge and capacitance in symmetric and asymmetric double-gate MOSFETs. IEEE Trans Electron Dev 48 12 (2001) 2861-2869
5. Suzuki K., Tanaka T., Tosaka Y., Horie H., Amimoto Y., and Itoh T. Analytical surface potential expression for thin-film double-gate SOI MOSFETs. Solid State Electron 37 2 (1994) 327-332
6. Frank D.J. Power constrained CMOS scaling limits. IBM J Res Dev 46 2/3 (2002)
7. Ma Y., Li Z., Liu L., Tian L., and Yu Z. Effective density-of-states approach to QM correction in MOS structure. Solid State Electron 44 (2000) 401-407
8. Chen Q., Harrell Jr. E.M., and Meindl J.D. A physical short-channel threshold voltage model for undoped symmetric double-gate MOSFETs. IEEE Trans Electron Dev 50 7 (2003) 1631
9. Yuan Taur Y. An analytical solution to a double-gate MOSFET with undoped body. IEEE Electron Dev Lett 21 May (2000) 245-247
10. Jiménez D., Sáenz J., Iñíguez B., Suñé J., Marsal L.F., and Pallarès J. Unified compact model for the ballistic quantum wire and quantum well metal-oxide-semiconductor field-effect transistor. J Appl Phys 94 2 (2003) 1061-1068
11. Jiménez D., Sáenz J., Iñíguez B., Suñé J., Marsal L.F., and Pallarès J. Modeling of nanoscale gate-all-around MOSFETs. IEEE Electron Dev Lett 25 5 (2004) 314-316
12. Jiménez D., Iñiguez B., Suñé J., Marsal L.F., Pallarès J., Roig J., and Flores D. Continuous analytic current-voltage model for surrounding-gate MOSFET. IEEE Electron Dev Lett 25 8 (2004) 571-573
13. Rahman A., and Lundstrom M.S. A compact scattering model for the nanoscale double-gate MOSFET. IEEE Trans Electron Dev 49 3 (2002) 481
14. Nguyen TN. Small-geometry MOS transistors: Physics and modeling of surface- and buried-channel MOSFET's. PhD dissertation, Stanford University, Stanford, CA, 1984.
15. Christopher R. Landry, Double-gate MOSFET: operation and threshold voltage Control, ECE 612 Final Report, May 8th, 2003.
16. Oh S-H. PhD thesis, Stanford University, June 2001.
17. Guo J. PhD thesis, Purdue University, 2002.
18. Chen Q. PhD thesis, Georgia Institute of Technology, January 2003.
19. Asaad F., Ren Z., and Daatta S. Performance limits of silicon MOSFET. IEEE Trans Electron Dev 47 1 (2000) 232-240
20. Frank D.J., and Dennard R.H. Device scaling limits of Si MOSFETs and their application dependencies. Proc IEEE 89 3 (2001)
21. Ge L., and Fossum J.G. Analytical modeling of quantization and volume inversion in thin Si-film DG MOSFETs. IEEE Trans Electron Dev 49 2 (2002) 287-294
22. Chindalore G., Hareland S.A., Jallepalli S., Tasch Jr. A.F., Maziar C.M., Chia V.K.F., and Smith S. Experimental determination of threshold voltage shifts due to quantum mechanical effects in MOS electron and hole inversion layers. IEEE Electron Dev Lett 18 5 (1997) 206-208
23. Kumar A., Kedzierski J., and Laux S.E. Quantum-based simulation analysis of scaling in ultrathin body device structures. IEEE Trans Electron Dev 52 4 (2005) 614-617
24. Chen Q., Agrawal B., and Meindl J.D. A comprehensive analytical subthreshold swing model for double-gate MOSFETs. IEEE Trans Electron Dev 49 6 (2002) 1086-1090
25. http://www.efunda.com/math/bessel/bessel.cf.
26. http://mathworld.wolfram.com/modifiedbesselfunctionofthefirstkind.html.
27. http://www.vibrationdata.com/.
28. Albiol A., Torres L., and Delp E.J. Audit to the rescue. OE Magazine 4 1 (2004) 17-21
29. Jodar L., and Sastre J. Asymptotic expressions of normalized Laguerre matrix polynomials on bounded intervals. Util Math 65 (2004) 3-31
30. Sastre J., and Jodar L. Asymptotics of the modified bessel and the incomplete gamma matrix functions. Appl Math Lett 16 (2003) 815-820
31. Kamke E. Differentialgleichungen losungsmethoden und Losungen, Lepizig (1942), Akademische Verlagsgesellschaft Becker & Erler Kom.-GEM, Germany