Increasing the mean grain size in copper films and features

Journal of Materials Research

Volumn 23, Issue 3, 2008, Pages 642-662

  Vanstreels, Kris ^a,b   Brongersma, S H ^b   Tokei, Zs ^b   Carbonell, L ^b   De Ceuninck, W ^a,b   D'Haen, J ^a,b   D'Olieslaeger, M ^a,b  

^a HASSELT UNIVERSITY   (Belgium)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; GRAIN GROWTH; GRAIN SIZE AND SHAPE; INTERFACES (MATERIALS); INTERFACIAL ENERGY; MICROSTRUCTURAL EVOLUTION; OPTIMIZATION; SEMICONDUCTING FILMS; SPUTTER DEPOSITION; STRAIN ENERGY; TEXTURES;

COPPER FILMS; POST-DEPOSITION ANNEALING TEMPERATURE; SUPER SECONDARY GRAIN GROWTH;

COPPER;

EID: 41449085153     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2008.0080     Document Type: Article

References (42)

1. D.C. Edelstein: Copper chip technology, in Proceedings of SPIE Conference, Multilevel Interconnect Technology II, edited by M. Graef, and D.N. Patel, Vol. 3508 (SPIE, Bellingham, W A, 1998), p. 8.
2. M.M. Chow, J.E. Cronin, W.L. Guthrie, W. Kaanta, B. Luther, W.J. Patrick, K.A. Perry, and C.L. Standley: Method for producing coplanar multi-level metal insulator films on a substrate and for forming patterned conductive lines simultaneously with stud vias. U.S. Patent No. 4 789 648, December 6, 1988.
3. P.C. Andricacos, C. Uzoh, J.O. Dukovic, J. Horkans, and H. Deligianni: Damascene copper electroplating for chip interconnections. IBM J. Res. Dev. 42, 567 (1998).
4. D. Josell, D. Wheeler, W.H. Huber, and T.P. Moffat: Superconformal electrodeposition in submicron features. Phys. Rev. Lett. 87, 016101 (2001).
5. S.H. Brongersma, E. Kerr, I. Vervoort, A. Saerens, and K. Maex: Grain growth, stress, and impurities in electroplated copper. J. Mater. Res. 17, 582 (2002).
6. S.H. Brongersma, E. Richard, I. Vervoort, H. Bender, W. Vandervorst, S. Lagrange, G. Beyer, and K. Maex: Two-step room temperature grain growth in electroplated copper. J. Appl. Phys. 86, 3642 (1999).
7. S.H. Brongersma, K. Vanstreels, W. Wu, W. Zhang, D. Ernur, J. D'Haen, V. Terzieva, M. Van Hove, T. Clarysse, L. Carbonell, W. Vandervorst, W. De Ceuninck, and K. Maex: Copper grain growth in reduced dimensions, Proc. IEEE International Interconnect Technology Conference (IITC, San Francisco, CA, 2004), pp. 48-52.
8. C.V. Thompson: Secondary grain growth in thin films of semi-conductors: Theoretical aspects. J. Appl. Phys. 58, 763 (1985).
9. S. Rossnagel: Ionization by radio frequency inductively coupled plasma, in Ionized Physical Vapor Deposition, edited by S. Rossnagel (Academic Press, San Diego, CA, 2000).
10. B.L. Chin, G. Yao, P. Ding, J. Fu, and L. Chen: Barrier and seed technologies for sub-0.10 micron copper chips. Semicond. Int. (2001), pp. 107-113.
11. P. Gopalraja and J. Forster: Nonlinear wave interaction in a magnetron plasma. Appl. Phys. Lett. 77(22), 3526 (2000).
12. Rohm and Haas Electronic Materials, Philadelphia, PA: http:// electronicmaterials.rohmhaas.com
13. KLA-Tencor, Milpitas, CA: http://www.kla-tencor.com
14. P.A. Flinn: Principles and applications of wafer curvature techniques for stress measurements in thin films, in Thin Films: Stresses and Mechanical Properties, edited by J.C. Bravman, W.D. Nix, D.M. Barnett, and D.A. Smith (Mater. Res. Soc. Symp. Proc. 130, Pittsburgh, PA, 1989), p. 41.
15. Institute for Materials Research: http://www.imo.uhasselt.be/pac/SEM1.htm
16. C.V. Thompson: Experimental and theoretical aspects of grain growth in thin films. Mater. Sci. Forum 94-96, 245 (1992).
17. J.E. Sanchez and E. Arzt: Effects of grain orientation on hillock formation and grain growth in aluminum films on silicon substrates. Scripta Metall. Mater. 27, 285 (1992).
18. C.V. Thompson: Texture evolution during grain growth in polycrystalline films. Scripta Metall. Mater. 28, 167 (1993).
19. J.M.E. Harper, C. Cabral, Jr., P.C. Andricacos, L. Gignac, I.C. Noyan, K.P. Rodbell, and C.K. Hu: Mechanisms for microstructure evolution in electroplated copper thin films near room temperature. J. Appl. Phys. 86, 2516 (1999).
20. C.V. Thompson: Coarsening of particles on a planar substrate: Interface energy anistropy and application to grain growth in thin films. Acta Metall. 36, 2929 (1988).
21. M. McLean and B. Gale: Surface energy anisotropy by an improved thermal grooving technique. Philos. Mag. 20, 1033 (1969).
22. Z. Jian-Min, M. Fei, and X. Ke-Wei: Calculation of the surface energy of fcc metals with modified embedded-atom method. Chin. Phys. 13, 1082 (2004).
23. M. Murikami and P. Chaudhari: Dependence of strains on crystal orientation in Pb thin films. Thin Solid Films 46, 109 (1977).
24. E.M. Zielinski, R.P. Vinci, and J.C. Bravman: Effects of barrier layer and annealing on abnormal grain growth in copper thin films. J. Appl. Phys. 76, 4516 (1994).
25. E.M. Zielinski, R.P. Vinci, and J.C. Bravman: The effects of processing on the microstructure of copper thin films on tantalum barrier layers, in Materials Reliability in Microelectronics V, edited by A.S. Oates, W.F. Filter, R. Rosenberg, A.L. Greer, and K. Gadepally (Mater. Res. Soc. Symp. Proc. 391, Pittsburgh, PA, 1995), p. 303.
26. J.W. Patten, E.D. McClanahan, and J.W. Johnson: Room-temperature recrystallization in thick bias-sputtered copper deposits. J. Appl. Phys. 42, 4371 (1971).
27. M. Chen, S. Rengarajan, P. Hey, Y. Dordi, H. Zhang, I. Hashim, P. Ding, and B. Chin: Room temperature self-annealing of electroplated and sputtered copper films, in Advanced Interconnects and Contacts, edited by D.C. Edelstein, T. Kikkawa, M.C. Öztürk, K-N. Tu, and E.J. Weitzman (Mater. Res. Soc. Symp. Proc. 564, Warrendale, PA, 1999), p. 413.
28. S.M. Rossnagel and T.S. Kuan: Time development of microstructure and resistivity for very thin Cu Films. J. Vac. Sci. Technol., A 20, 1911 (2002).
29. E.V. Barnat, D. Nagakura, P.I. Wang, and T.M. Lu: Real time resistivity measurements during sputter deposition of ultrathin copper films. J. Appl. Phys. 91, 1667 (2002).
30. C. Detavernier, D. Deduytsche, R.L. Van Meirhaege, J. De Baerdemaeker, and C. Dauwe: Room-temperature grain growth in sputter-deposited Cu films. Appl. Phys. Lett. 82, 1863 (2003).
31. S.P. Murarka and S.W. Hymes: Copper metallization for ULSI and beyond. Crit. Rev. Solid State Mater. Sci. 20, 87 (1995).
32. P. Chaudhari: Mechanisms of stress relief in polycrystalline films. IBM J. Res. Dev. 13, 197 (1969).
33. S-J. Hwang, Y-D. Lee, Y-B. Park, J-H. Lee, C-O. Jeong, and Y-C. Joo: In situ study of stress relaxation mechanisms of pure Al thin films during isothermal annealing. Scripta Mater. 54, 1841 (2006).
34. S.H. Brongersma, K. Vanstreels, W. Wu, W. Zhang, D. Emur, J. D'Haen, V. Terzieva, M. Van Hove, T. Clarysse, L. Carbonell, W. Vandervorst, W. De Ceuninck, and K. Maex: Copper grain growth in reduced dimensions. Proc. IEEE International Interconnect Technology Conference (IITC, San Francisco, CA, 2004), pp. 48-50.
35. S.H. Brongersma, I. Vervoort, E. Richard, and K. Maex: A grain size limitation inherent to electroplated copper films. Proc. of the IITC (Burlingame, CA, 2000), pp. 31-33.
36. D.P. Field, T. Muppidi, and J.E. Sanchez: Electron backscatter diffraction characterization of inlaid Cu lines for interconnect applications. Scanning 25(6), 309 (2003).
37. C. Lingk, M.E. Gross, and W.L. Brown: X-ray diffraction pole figures evidence for (111) sidewall texture of electroplated Cu in submicron damascence trenches. Appl. Phys. Lett. 74, 682 (1999).
38. P.R. Besser, E. Zschech, W. Blum, D. Winter, R. Oretega, S. Rose, M. Herrick, M. Gall, S. Thrasher, M. Tiner, B. Baker, G. Braeckelmann, L. Zhao, C. Simpson, C. Capasso, H. Kawasaki, and E. Weitzman: Microstructural characterization of inlaid copper interconnect lines. J. Electron. Mater. 30, 320 (2001).
39. D.N. Lee and H.J. Lee: Effect of stresses on the evolution of annealing textures in Cu and Al interconnects. J. Electron. Mater. 32, 1012 (2003).
40. K.P. Rodbell, D.B. Knorr, and J.D. Mis: The microstructure, mechanical stress, texture, and electromigration behavior of Al-Pd alloys. J. Electron. Mater. 22, 597 (1993).
41. M.J. Attardo and R. Rosenberg: Electromigration damage in aluminum film conductors. J. Appl. Phys. 41, 2381 (1970).
42. A.N. Campbell, E.M. Russel, and D.B. Knorr: Relationship between texture and electromigration lifetime in sputtered Al-1 %Si thin films. J. Electron. Mater. 22, 589 (1993).