Electron Backscatter Diffraction Characterization of Inlaid Cu Lines for Interconnect Applications

Scanning

Volumn 25, Issue 6, 2003, Pages 309-315

  Field, David P ^a,c   Muppidi, T ^a   Sanchez Jr , J E ^b  

^a Washington State University   (United States)

^b Unity Semiconductor   (United States)

^c WASHINGTON STATE UNIVERSITY   (United States)

Author keywords

Copper; Electron backscatter diffraction; Texture; Thin films

Indexed keywords

ANNEALING; BACKSCATTERING; CRYSTALLOGRAPHY; ELECTRON DIFFRACTION; ELECTROPLATING; FABRICATION; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; MICROSTRUCTURE; THIN FILMS;

INTERCONNECT LINES;

COPPER;

COPPER;

ARTICLE; ELECTRON; ELECTRON BACKSCATTER DIFFRACTION; ELECTRON MICROSCOPY; IMAGE ANALYSIS; IMAGING SYSTEM; PRIORITY JOURNAL; SCANNING ELECTRON MICROSCOPY; STRUCTURE ANALYSIS;

EID: 0346121665     PISSN: 01610457     EISSN: None     Source Type: Journal    
DOI: 10.1002/sca.4950250607     Document Type: Article

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