Nitrogen incorporation in GaInNAs and GaAsN near the solubility limit

Journal of Materials Science: Materials in Electronics

Volumn 13, Issue 9, 2002, Pages 525-529

  Thomas, S ^a   White, S ^a   Chalker, P R ^a   Bullough, T J ^a   Joyce, T B ^a  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; ENERGY TRANSFER; GALLIUM COMPOUNDS; INTERFACES (MATERIALS); NITROGEN; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; THICK FILMS; TRANSMISSION ELECTRON MICROSCOPY;

CELLLULAR MICROSTRUCTURE; ENERGY DISPERSIVE MAPS; GALLIUM ARSENIC NITRIDE; GALLIUM ARSENIDE; GALLIUM INDIUM SODIUM ARSENIDE;

MICROSTRUCTURE;

EID: 0036756225     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1019641611417     Document Type: Article

References (25)

1. M. C. LARSON, M. KONDOW, T. KITATANI, Y. YAZAWA, and M. OKAI, Electron. Lett. 33 (1997) 959.
2. M. C. LARSON, M. KONDOW, T. KITATANI, K. TAMURA, Y. YAZAWA and M. OKAI, IEEE Photon. Tech. Lett. 9 (1997) 1549.
3. M. C. LARSON, M. KONDOW, T. KITATANI, K. NAKAHARA, K. TAMURA, H. INOUE and K. UOMI, ibid. 10 (1998) 188.
4. C. ELLMERS, F. HOHNSDORF, J. KOCH, C. AGERT, S. LEU, D. KARAISKAJ, M. HOFMANN, W. STOLZ, and W. W. RUHLE, Appl Phys Lett. 74 (1999) 2271.
5. A. WAGNER, C. ELLMERS, F. HOHNSDORF, J. KOCH, C. AGERT, S. LEU, M. HOFMANN, W. STOLZ and W. W. RUHLE, ibid. 76 (2000) 271.
6. C. W. COLDREN, M. C. LARSON, S. G. SPRUYTTE and J. S. HARRIS, Electron. Lett. 36 (2000) 951.
7. J. B. HEROUX, X. YANG and W. I. WANG, Appl. Phys. Lett. 75 (1999) 2716.
8. S. R. KURTZ, A. A. ALLERMAN, E. D. JONES, J. M. GEE, J. J. BANAS and B. E. HAMMONS, ibid. 74 (1999) 729.
9. H. P. XIN, C. W. TU and M. GEVA, ibid. 75 (1999) 1416.
10. J. NEUGEBAUER and C. G. VAN DE WALLE, Phys. Rev. B 51 (1995) 568.
11. C. T. FOXON, T. S. CHENG, S. V. NOVIKOV, D. E. LACKLISON, L. C. JENKINS, D. JOHNSTON, J. W. ORTON, S. E. HOOPER, N. BABA-ALI, T. L. TANSLEY and V. V. TRET'YAKOV, J. Cryst. Growth 150 (1995) 892.
12. W. G. BI and C. W. TU, Appl. Phys. Lett. 70 (1997) 1608.
13. R. J. POTTER, N. BALKAN, M. J. ADAMS, P. R. CHALKER, T. B. JOYCE and T. J. BULLOUGH, Proc. SPIE Pts 1 and 2, 3944 (2000) 900 (SPIE-Int. Society Optical Engineering, ISBN: 0-8194-3561-9).
14. M. SOPANEN, H. P. XIN and C. W. TU, Appl. Phys. Lett. 76 (2000) 994.
15. T. PROKOFYEVA, T. SAUNCY, M. SEON and M. HOLTZ ibid. 75 (1998) 1409.
16. P. R. CHALKER, T. B. JOYCE, T. FARRELL, C. JOHNSTON, J. A. A. CROSSLEY and J. ECCLES, Thin Solid Films 344 (1999) 575.
17. BERGMAN and R. J. NEMANICH, Annu. Rev. Mater. Sci. 26 (1996) 551.
18. J. W. ORTON and C. T. FOXON, Rep. Prog. Phys. 61 (1998) 1.
19. D. D. MANCHON, A. S. BARKER, P. J. DEAN and R. B. ZETTERSTROM, Solid State Commun. 8 (1970) 1227.
20. S. MURUGKAR, R. MERLIN, A. BOTCHKAREV, A. SALVADOR and H. MORKOC, J. Appl. Phys. 77 (1995) 6042.
21. S. THOMAS, T. J. BULLOUGH, P. R. CHALKER, T. B. JOYCE and J. ZHENG, Microscopy of Semiconducting Materials, 2001, Inst. Phys. Conf. Series No. 169, p. 23.
22. R. MERLIN, in EMIS Datareviews No. 8 (1993), edited by P. Bhattacharya (INSPEC) p. 192.
23. J. TERSOFF, Phys. Rev. Lett. 81 (1998) 3183.
24. P. VENEZUELA and J. TERSOFF, Phys. Rev. B 58 (1998) 10871.
25. A. G. NORMAN, T.-Y. SEONG, I. T. FERGUSON, G. R. BOOKER and B. A. JOYCE, Semiconductor Sci. Technol. 8 (1993) S9.