Optical properties of GaInNAs/GaAs quantum wells

Solid-State Electronics

Volumn 47, Issue 3, 2003, Pages 483-487

  Mazzucato, S ^a   Erol, A ^a,b   Potter, R J ^a   Balkan, N ^a   Chalker, P R ^c   Thomas, S ^c   Joyce, T B ^c   Bullough, T J ^c  

^a UNIVERSITY OF ESSEX   (United Kingdom)

^b ISTANBUL UNIVERSITY   (Turkey)

^c UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

BAC model; GaInNAs; Photoluminescence; PL

Indexed keywords

ELECTRIC POTENTIAL; FERMI LEVEL; MONOCHROMATORS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; X RAY ANALYSIS;

CHEMICAL BEAM EPITAXY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037345275     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00394-5     Document Type: Conference Paper

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