Investigation of the channel-width dependence of CHEI Program / HHI erase cycling behavior in nitride-based charge-trapping flash (CTF) memory devices

Journal of the Korean Physical Society

Volumn 52, Issue 2, 2008, Pages 481-486

  Seo, Seung Hwan ^a   Kim, Se Woon ^a   Lee, Jang Uk ^a   Kang, Gu Cheol ^a   Roh, Kang Seob ^a   Kim, Kwan Young ^a   Lee, Sunyeong ^a   Choi, Chang Min ^a   Song, Kwan Jae ^a   Park, So Ra ^a   Park, Jun Hyun ^a   Jeon, Kichan ^a   Kim, Dong Myong ^a   Kim, Dae Hwan ^a  

^a Kookmin University   (South Korea)

Author keywords

Charge trap flash memories; Cycling behavior; Nitride read only memory; Silicon oxide nitride oxide silicon; Width dependence

Indexed keywords

EID: 40049105520     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.52.481     Document Type: Article

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