Studies of the reverse read method and second-bit effect of 2-bit/cell nitride-trapping device by quasi-two-dimensional model

IEEE Transactions on Electron Devices

Volumn 53, Issue 1, 2006, Pages 119-124

  Lue, Hang Ting ^a,b   Hsu, Tzu Hsuan ^b   Wu, Min Ta ^b   Hsieh, Kuang Yeu ^b   Liu, Rich ^a,b   Lu, Chih Yuan ^a,b  

^a IEEE   (Taiwan)

^b MACRONIX INTERNATIONAL CO LTD   (Taiwan)

Author keywords

2 bit cell; Local drain induced barrier lowering (DIBL); NROM; Reverse read method; Second bit effect; Short channel effect

Indexed keywords

LOCAL DRAIN-INDUCED BARRIER LOWERING (DIBL); REVERSE READ METHODS; SECOND-BIT EFFECTS; SHORT CHANNEL EFFECTS;

COMPUTER SIMULATION; ELECTRON INJECTION; MATHEMATICAL MODELS; NUMERICAL METHODS; SURFACE POTENTIAL;

ELECTRONIC EQUIPMENT;

EID: 33947618498     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.860644     Document Type: Article

References (11)

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