Subthreshold slope degradation model for localized-charge-trapping based non-volatile memory devices

Solid-State Electronics

Volumn 47, Issue 5, 2003, Pages 937-941

  Shappir, Assaf ^a,b   Shacham Diamand, Yosi ^a   Lusky, Eli ^a   Bloom, Ilan ^b   Eitan, Boaz ^b  

^a TEL AVIV UNIVERSITY   (Israel)

^b Saifun Semiconductors Ltd   (Israel)

Author keywords

Charge sharing; Localized trapped charge; NROM ; Subthreshold

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TRAPS; MOSFET DEVICES; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR STORAGE; THRESHOLD VOLTAGE;

CHARGE TRAPPING;

NONVOLATILE STORAGE;

EID: 0037408487     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00454-9     Document Type: Article

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