A novel operation method to avoid overerasure in a scaled trapping-nitride localized charge storage flash memory cell and its application for multi-level programming

IEEE Transactions on Electron Devices

Volumn 53, Issue 4, 2006, Pages 808-814

  Tsai, Wen Jer ^a   Zous, Nian Kai ^a   Wang, Tahui ^a,b   Ku, Yen Hui Joseph ^a   Lu, Chih Yuan ^a  

^a MACRONIX INTERNATIONAL CO LTD   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Band to band tunneling (BTBT) induced hot hole (HH) injection; Channel hot electron (CHE) injection; Flash electrically erasable programmable read only memory (EEPROM); Multilevel programming; Multiplex virtual ground AND (MXVAND); NBit; Nitride read only memory (NROM); Overerasure; Programming by hot hole injection nitride electron storage (PHINES); Self convergent; Silicon oxide nitride oxide silicon (SONOS); Soft program; Trapped charge storage; Trapping nitride

Indexed keywords

ELECTRON TRAPS; ELECTRON TUNNELING; HOLE TRAPS; PROM; SEMICONDUCTING SILICON COMPOUNDS; THRESHOLD VOLTAGE;

BAND-TO-BAND-TUNNELING (BTBT); CHANNEL HOT ELECTRON (CHE) INJECTION; FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY (EEPROM); MULTILEVEL PROGRAMMING; MULTILEVEL VIRTUAL GROUND AND (MXVAND); SILICON-OXIDE-NITRIDE-OXIDE-SILICON (SONOS); TRAPPED CHARGE STORAGE;

FLASH MEMORY;

EID: 33645745589     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.871198     Document Type: Article

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