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Volumn 28, Issue 4, 2007, Pages 276-278

New operating mode based on electron/hole profile matching in nitride-based nonvolatile memories

Author keywords

Endurance; Matching; Nitride; Nonvolatile mem ories (NVM); Retention

Indexed keywords

CHANNEL HOT ELECTRON INJECTION; ENDURANCE; HIGH TEMPERATURE; HOT HOLE INJECTIONS; INJECTED ELECTRONS; MATCHING; NON-VOLATILE; NON-VOLATILE MEMORIES; NONVOLATILE MEMORY CELLS; OPERATING MODES; OPERATING VOLTAGE; RETENTION; NON-VOLATILE MEMORY;

EID: 40049094138     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.891756     Document Type: Article
Times cited : (12)

References (9)
  • 1
    • 33751022280 scopus 로고    scopus 로고
    • Future outlook of NAND flash technology for 40 nm node and beyond
    • K. Kim and J. Choi, "Future outlook of NAND flash technology for 40 nm node and beyond," in Proc. Non Volatile Semicond. Memory Workshop, 2006, pp. 9-10.
    • (2006) Proc. Non Volatile Semicond. Memory Workshop , pp. 9-10
    • Kim, K.1    Choi, J.2
  • 3
    • 0034315780 scopus 로고    scopus 로고
    • NROM: A novel localized trapping, 2-bit nonvolatile memory cell
    • Nov.
    • B. Eitan, P. Pavan, I. Bloom, E. Aloni, A. Frommer, and D. Finzi, "NROM: A novel localized trapping, 2-bit nonvolatile memory cell," IEEE Electron Device Lett., vol. 21, no. 11, pp. 543-545, Nov. 2000.
    • (2000) IEEE Electron Device Lett. , vol.21 , Issue.11 , pp. 543-545
    • Eitan, B.1    Pavan, P.2    Bloom, I.3    Aloni, E.4    Frommer, A.5    Finzi, D.6
  • 5
    • 3042821869 scopus 로고    scopus 로고
    • An embedded 90 nm SONOS flash EEPROM utilizing hot electron injection programming and two sided hot hole injection erase
    • E. Prinz, G. Chindalore, K. Harber, C. Hong, C. Li, and C. Swift, "An embedded 90 nm SONOS flash EEPROM utilizing hot electron injection programming and two sided hot hole injection erase," in Proc. Non Volatile Semicond. Memory Workshop, 2003, pp. 56-57.
    • (2003) Proc. Non Volatile Semicond. Memory Workshop , pp. 56-57
    • Prinz, E.1    Chindalore, G.2    Harber, K.3    Hong, C.4    Li, C.5    Swift, C.6
  • 6
    • 0038648963 scopus 로고    scopus 로고
    • Data retention, endurance and acceleration factors of NROM devices
    • M. Janai, "Data retention, endurance and acceleration factors of NROM devices," in Proc. 41st Annu. Int. Reliab. Phys. Symp., 2003, pp. 502-505.
    • (2003) Proc. 41st Annu. Int. Reliab. Phys. Symp. , pp. 502-505
    • Janai, M.1
  • 8
    • 33751050623 scopus 로고    scopus 로고
    • Quantitative model for data retention loss at NROM nitride charge trapping devices after program/erase cycling
    • G. Tempel, R. Hagenbeck, and M. Strassburg, "Quantitative model for data retention loss at NROM nitride charge trapping devices after program/erase cycling," in Proc. Non Volatile Semicond. Memory Workshop, 2006, pp. 78-80.
    • (2006) Proc. Non Volatile Semicond. Memory Workshop , pp. 78-80
    • Tempel, G.1    Hagenbeck, R.2    Strassburg, M.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.