Cause of data retention loss in a nitride-based localized trapping storage flash memory cell

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2002, Pages 34-38

  Tsai, W J ^a   Gu, S H ^a   Zous, N K ^a   Yeh, C C ^a   Liu, C C ^a   Chen, C H ^a   Wang, Tahui ^a   Pan, Sam ^a   Lu, Chih Yuan ^a  

^a MACRONIX INTERNATIONAL CO LTD   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DATA HANDLING; ELECTRIC LOSSES; LEAKAGE CURRENTS; NITRIDES; SEMICONDUCTOR STORAGE;

DATA RETENTION LOSSES; FLASH MEMORY CELLS;

FLASH MEMORY;

EID: 0036081965     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

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8. Characterization of channel hot electron injection by the subthreshold slope of NROM™ device
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10. Tunneling discharge of trapped holes in silicon dioxide