Body-Tied Double-Gate SONOS Flash (Omega Flash) Memory Device Built on a Bulk Si Wafer

Journal of the Korean Physical Society

Volumn 44, Issue 1, 2004, Pages 83-86

  Cho, Il Hwan ^a   Park, Byung Gook ^a   Lee, Jong Duk ^a   Park, Tai Su ^a   Choi, Si Young ^b   Lee, Jong Ho ^c  

^a Seoul National University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

^c Kyungpook National University   (South Korea)

Author keywords

Design and modeling (Nano Science Technology); Semiconductor device characterization

Indexed keywords

EID: 0842285840     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (4)

1. Byungcheul Kim, Sang-Bae Yi and Kwang-Yell Seo, J. Korean Phys. Soc. 41, 945 (2002).
2. D. Hisamoto, Wen-Chin, Jakub Kedzierski, Hideki Takeuchi, Kazuya Asamo, Charles Kuo, Erik Anderson, Tsu-Jae King, Jeffrey Bokor and Chenming Hu, IEEE Electron Dev. 47, 2320 (2000).
3. I. H. Cho, B. G. Park, J. D. Lee and J. H. Lee, J. Korean Phys. Soc. 40, 233 (2002).
4. Byungcheul Kim, Sang-Eun Lee and Kwang-Well Seo, J. Korean Phys. Soc. 40, 644 (2002).