Characterization of programmed charge lateral distribution in a two-bit storage nitride flash memory cell by using a charge-pumping technique

IEEE Transactions on Electron Devices

Volumn 53, Issue 1, 2006, Pages 103-107

  Gu, Shaw Hung ^b   Wang, Tahui ^a,b   Lu, Wen Pin ^c   Ting, Wenchi ^c   Ku, Yen Hui Joseph ^c   Lu, Chih Yuan ^a,c  

^a IEEE   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c MACRONIX INTERNATIONAL CO LTD   (Taiwan)

Author keywords

Charge pumping (CP); Cycling stress; Programmed charge distribution; Two bit storage nitride Flash cell

Indexed keywords

CHARGE PUMPING (CP); CYCLING STRESS; PROGRAMMED CHARGE DISTRIBUTION; SECOND BIT PROGRAMMING; TWO-BIT STORAGE NITRIDE FLASH CELLS;

CHARGE DISTRIBUTION; DRAIN CURRENT; ELECTRIC CHARGE; ELECTRON INJECTION; HOT ELECTRONS; SEMICONDUCTOR JUNCTIONS;

FLASH MEMORY;

EID: 33947631407     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.860632     Document Type: Article

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