Influence of postoxidation cooling rate on residual stress and pnjunction leakage current in locos isolated structures

IEEE Transactions on Electron Devices

Volumn 43, Issue 11, 1996, Pages 19891993-

  Smeys, Peter ^a   Griffin, Peter B ^a   Saraswat, Krishna C ^a  

^a Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33748012652     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (17)

1. K. Ryoo. R. Droscl, and W. Wood Location effects of extended defects on electrical properties of PN junctions." J. Eleclrochem. Soc., vol. 136, p. 768. 1989.
2. D.B. Kao, J. P. Mcvittie, W. D. Nix, and K. C. Saraswat Two
3. dimensional thermal oxidation of siliconI. Experiments." IEEE Trans. Electron Devices vol. 34, p. 1008, 1987.
4. D.B. Kao, J. P. Mcvillie, W. D. Nix, and K. C. Saraswat Two
5. dimensional thermal oxidation of siliconH. Modeling stress effects in wet oxides,'" IEEE Irans. Electron Devices, vol. 35, p. 25, 1988.
6. S. M. Hu. 'Temperature distribution and stresses in circular wafers in a row during radiative cooling," J. Appl. Phys., vol. 48, p. 4413, 1969.
7. E. Kooi The invention of LOCOS," in IEEE Case Historiés of Achievement in Science and Technology, 1991, vol. 1.
8. M. Itoli, Y. Habutsti, S. Kuroda, Y. Nagatomo, and M. Ino A new study of the junction leakage current due to 45 degreeoff active pattern after LOCOS process," in IEDM Tech. Dig., 1993, p. 743.
9. I. Goroff and L. Kleinman Deformation potentials in siliconIll. Effects of a general strain on conduction and valence levels," Phys. Rev., vol. 132, pp. 10801084. 1963.
10. S. Kuroda and K Nishi Simulation of stress redistribution on LOCOS structare during oxidation and subsequent cooling down," IEICE Trans. Electron., vol. E75C. p. 145, 1992.
11. 2 at low oxidation temperatures." J. Electmchem. Soc., vol. 129. p. 2594, 1983.
12. 9 films on silicon," J. Electmchem. Soc., vol. 134. p. 2020, 1987.
13. S. M. Hu Stressrelated problems in silicon technology." J. Appl. Phys., vol. 70, pp. R53R80, 1991.
14. T. Sonia and H.M. Kagaya Thermal expansion coefficient of Si," in Properties of Silicon. New York: INSPEC. 1988, p. 33.
15. P. Smeys, P. B. Griffln, and K. C. Saraswat Mechanical properties of low pressure chemical vapor deposited silicon nitride for modeling and calibrating the simulation of advanced isolation structures." J. Appl. Phys., vol. 78. pp. 28372842, 1995.
16. G. Bcntini, L. Corrcra, and C. Donolato Defects introduced in silicon wafers dining lapid thermal isothermal annealing: Thermoelastic and thermoplastic effects," J. Appl. Phys., vol. 56, p. 2922, 1984.
17. R. Liu, C.Y. Lu, J. Sung, C.S. Pai, and N.S. Tsai The effects of rapid thermal processing on ultrashallow junctions for deep submicron MOSFETs," Solid Slate Electron., vol. 38, p. 1473, 1995.