Electrical analysis of external mechanical stress effects in short channel MOSFETs on (0 0 1) silicon

Solid-State Electronics

Volumn 48, Issue 4, 2004, Pages 561-566

  Gallon, C ^a   Reimbold, G ^a   Ghibaudo, G ^b   Bianchi, R A ^c   Gwoziecki, R ^a,c  

^a CEA GRENOBLE   (France)

^b IMEP LAHC   (France)

^c STMICROELECTRONICS   (France)

Author keywords

Extraction of piezoresistive coefficients; Four point bending method; Mechanical stress

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC RESISTANCE; LEAKAGE CURRENTS; SILICON; SILICON ON INSULATOR TECHNOLOGY; SIMULATORS; STRENGTH OF MATERIALS; TENSILE STRESS; THRESHOLD VOLTAGE;

EXTRACTION OF PIEZORESISTIVE COEFFICIENTS; FOUR-POINT BENDING METHOD; MECHANICAL STRESS;

MOSFET DEVICES;

EID: 0442311973     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2003.09.024     Document Type: Conference Paper

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