Activation energy analysis as a tool for extraction and investigation of p-n junction leakage current components

Journal of Applied Physics

Volumn 94, Issue 2, 2003, Pages 1218-1221

  Czerwinski, A ^a   Simoen, E ^b   Poyai, A ^b,c   Claeys, C ^b,c  

^a Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CMOS INTEGRATED CIRCUITS; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC FIELDS; EXTRAPOLATION; ION IMPLANTATION; SEMICONDUCTOR JUNCTIONS;

REVERSE CURRENT;

LEAKAGE CURRENTS;

EID: 0042267251     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1582553     Document Type: Article

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