Design of high performance PFETs with strained Si channel and laser anneal

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 489-492

  Luo, Z ^a   Chong, Y F ^a   Kim, J ^a   Rovedo, N ^a   Greene, B ^a   Panda, S ^a   Sato, T ^a   Holt, J ^a   Chidambarrao, D ^a   Li, J ^a   Davis, R ^a   Madan, A ^a   Turansky, A ^a   Gluschenkov, O ^a   Lindsay, R ^a   Ajmera, A ^a   Lee, J ^a   Mishra, S ^a   Amos, R ^a   Schepis, D ^a   Ng, H ^a   Rim, K ^a   more..

^a IBM RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVELY STRESSED NITRIDE LINER (CSL); LASER ANNEAL (LA);

DEFECTS; LASERS; SILICON COMPOUNDS;

FIELD EFFECT TRANSISTORS;

EID: 33847696543     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. S. Ito et al., IEDM, pp. 247-250, 2000;
2. H. S. Yang, IEDM, pp. 1075, 2004;
3. T. Ghani et al., IEDM, pp. 978, 2003;
4. P. R. Chidambaram et al., VLSI Tech., pp. 48, 2004;
5. K. Goto et al., IEDM, pp. 209, 2004;
6. P. Bai et al., IEDM, pp. 657, 2004;
7. K. Rim et al., IEDM, pp. 43, 2002;
8. H. Stohr et al., Allgem. Chem. 241, pp. 305, 1954;