Novel enhanced stressor with graded embedded SiGe source/drain for high performance CMOS devices

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Han, J P ^a   Utomo, H ^b   Teo, L W ^c   Rovedo, N ^b   Luo, Z ^b   Krishnasamy, R ^b   Stierstorfer, R ^a   Chong, Y F ^c   Fang, S ^a   Ng, H ^b   Holt, J ^b   Adam, T N ^b   Kempisty, J ^b   Gutmann, A ^a   Schepis, D ^b   Mishra, S ^c   Zhuang, H ^a   Kim, J J ^d   Li, J ^b   Murphy, R ^b   Davis, R ^b   Lawrence, B St ^b   Madan, A ^b   Turansky, A ^b   Burns, L ^b   Loesing, R ^b   Kim, S D ^b   Lindsay, R ^a   Chiulli, G ^b   Amos, R ^b   Hierlemann, M ^a   Shum, D ^a   Ku, J H ^d   Sudijono, J ^c   Ieong, M ^b   more..

^a INFINEON TECHNOLOGIES   (United States)

^b IBM   (United States)

^c CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^d IBM RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL STRAIN; CMOS INTEGRATION; DRIVE CURRENTS; HIGH-PERFORMANCE CMOS; PERFORMANCE GAINS;

ELECTRON DEVICES; GERMANIUM; SILICON ALLOYS;

SEMICONDUCTING GERMANIUM COMPOUNDS;

EID: 46049102033     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346958     Document Type: Conference Paper

References (8)

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4. Z. Luo et. al. IEDM Tech. Dig, pp. 495-498, 2005
5. H.S. Yang et. al. IEDM Tech. Dig., pp. 1075, 2004
6. S. Ito et. al. IEDM Tech. Dig., pp. 247-250, 2000.
7. A. Fischer, Stability constraint in SiGe epitaxy in Si Heterostructure handbook, 127-141, 2006
8. TSuprem4, ver. 2005.10, Synopsys Inc., 2005