Back-gate bias enhanced band-to-band tunneling leakage in scaled MOSFET's

IEEE Electron Device Letters

Volumn 19, Issue 4, 1998, Pages 134-136

  Chen, Ming Jer ^a,b   Huang, Huan Tsung ^b   Hou, Chin Shan ^a,c   Yang, Kuo Nan ^b  

^a IEEE   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CMOS INTEGRATED CIRCUITS; COMPOSITION EFFECTS; COMPUTER SIMULATION; ELECTRON TUNNELING; GATES (TRANSISTOR); LEAKAGE CURRENTS; SEMICONDUCTOR DOPING;

BACK GATE BIAS; BAND TO BAND TUNNELING (BTBT);

MOSFET DEVICES;

EID: 0032049972     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.663538     Document Type: Article

References (6)

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