Enhanced performance of PMOS MUGFET via integration of conformal plasma-doped source/drain extensions

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2006, Pages 168-169

  Lenoble, D ^a   Anil, K G ^b   De Keersgieter, A ^b   Eybens, P ^b   Collaert, N ^b   Rooyackers, R ^b   Brus, S ^b   Zimmerman, P ^c   Goodwin, M ^b   Vanhaeren, D ^b   Vandervorst, W ^b   Radovanov, S ^d   Godet, L ^d,e   Cardinaud, C ^e   Biesemans, S ^b   Skotnicki, T ^f   Jurczak, M ^b  

^a STMICROELECTRONICS   (Belgium)

^b IMEC   (Belgium)

^c Intel Corporation Belgium   (Belgium)

^d VSEA   (United States)

^e UNIVERSITÉ DE NANTES   (France)

^f STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); HAFNIUM COMPOUNDS; OPTIMIZATION; PLASMAS; TITANIUM COMPOUNDS;

DRAIN EXTENSIONS; FIN STRUCTURES; GATE STACKS;

MOS DEVICES;

EID: 39549118253     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

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5. S. Radovanov et al., J. Applied physics 98, 113307, 2005
6. P.Eyben et al., AIP Conference Proceedings no.683 : 685-92, 2003