dc-Conduction mechanism in lanthanum-manganese oxide films grown on p-Si substrate

Microelectronics Reliability

Volumn 48, Issue 3, 2008, Pages 395-400

  Dakhel, A A ^a  

^a UNIVERSITY OF BAHRAIN   (Bahrain)

Author keywords

[No Author keywords available]

Indexed keywords

LANTHANUM COMPOUNDS; LEAKAGE CURRENTS; MANGANESE COMPOUNDS; PERMITTIVITY; THIN FILMS; X RAY DIFFRACTION;

DC-CONDUCTION MECHANISM; DYNAMIC RELATIVE PERMITTIVITY; OXIDE INSULATING FILMS; P-SI SUBSTRATES;

OXIDE FILMS;

EID: 39449094591     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2007.08.003     Document Type: Article

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