All hot wire CVD TFTs with high deposition rate silicon nitride (3 nm/s)

Solid-State Electronics

Volumn 52, Issue 3, 2008, Pages 427-431

  Schropp, R E I ^a   Nishizaki, S ^b   Houweling, Z S ^a   Verlaan, V ^a   van der Werf, C H M ^a   Matsumura, H ^b  

^a UTRECHT UNIVERSITY   (Netherlands)

^b JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

High deposition rate; Hot wire chemical vapor deposition; Silicon nitride; Thin film transistors

Indexed keywords

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; DEPOSITION RATES; HEAT TREATMENT; MASS TRANSFER; SILICON NITRIDE;

HIGH DEPOSITION RATE; HOT WIRE CHEMICAL VAPOR DEPOSITION; MASS DENSITY; PROTOCRYSTALLINE REGIME;

THIN FILM TRANSISTORS;

EID: 38949139496     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.10.034     Document Type: Article

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