Growth process and properties of silicon nitride deposited by hot-wire chemical vapor deposition

Journal of Applied Physics

Volumn 93, Issue 5, 2003, Pages 2618-2625

  Stannowski, B ^a   Rath, J K ^a   Schropp, R E I ^a  

^a UTRECHT UNIVERSITY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

INFRARED SPECTROSCOPY; ION BOMBARDMENT; NANOSTRUCTURED MATERIALS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; STOICHIOMETRY; THIN FILM TRANSISTORS; TRANSMISSION ELECTRON MICROSCOPY;

GAS-FLOW RATIO;

SILICON NITRIDE;

EID: 0037352225     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1542658     Document Type: Article

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