Rapid solid-phase crystallization of high-rate, hot-wire chemical-vapor-deposited hydrogenated amorphous silicon

Applied Physics Letters

Volumn 89, Issue 16, 2006, Pages

  Young, David L ^a   Stradins, Paul ^a   Xu, Yueqin ^a   Gedvilas, Lynn ^a   Reedy, Bob ^a   Mahan, A H ^a   Branz, Howard M ^a   Wang, Qi ^a   Williamson, D L ^b  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b Department of Geology and Geological Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); CRYSTALLIZATION; HYDROGENATION; NUCLEATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SOLID PROPELLANTS;

DEPOSITION RATE; NANOVOID DENSITY; RAPID SOLID PHASE;

AMORPHOUS SILICON;

EID: 33750146256     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2361163     Document Type: Article

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