Thin film transistors with high mobility and high threshold voltage stability made using hot wire chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 5 B, 2006, Pages 4309-4312

  Schropp, Ruud E I ^a  

^a UTRECHT UNIVERSITY   (Netherlands)

Author keywords

Hot wire chemical vapor deposition; Mobility; Silicon; Silicon nitride; Stability; TFT

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DEPOSITION; ELECTRON MOBILITY; HYDROGEN; PLASMA APPLICATIONS; SILICON; SILICON NITRIDE; THRESHOLD VOLTAGE;

AMORPHOUS CHANNEL MATERIAL; GAS UTILIZATION; HOT WIRE CHEMICAL VAPOR DEPOSITION; MOBILITY; TFT;

THIN FILM TRANSISTORS;

EID: 33744471648     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.4309     Document Type: Review

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