Reaction mechanism for deposition of silicon nitride by hot-wire CVD with ultra high deposition Rate(>7 nm/s)

Materials Research Society Symposium Proceedings

Volumn 910, Issue , 2007, Pages 61-66

  Verlaan, Vasco ^a   Houweling, Zomer Silvester ^a   Van Der Werf, Karine ^a   Goldbach, Hanno D ^a   Schropp, Ruud ^a  

^a UTRECHT UNIVERSITY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CONCENTRATION (PROCESS); CROSSLINKING; FLOW OF GASES; SILICON NITRIDE;

GAS-FLOW RATIO; HOT-WIRE CHEMICAL VAPOR DEPOSITION (HW CVD); SOURCE GASSES;

REACTION KINETICS;

EID: 34249948075     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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