High performance amorphous-silicon thin film transistors prepared by catalytic chemical vapor deposition with high deposition rate

Thin Solid Films

Volumn 395, Issue 1-2, 2001, Pages 330-334

  Sakai, Masahiro ^a   Tsutsumi, Takayuki ^a   Yoshioka, Tatsuo ^a   Masuda, Atsushi ^a   Matsumura, Hideki ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

Catalytic chemical vapor deposition; Hydrogenated amorphous silicon; Mobility; Silicon nitride films; Thin film transistors

Indexed keywords

AMORPHOUS SILICON; CATALYSIS; CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); GATES (TRANSISTOR); PARAMAGNETIC RESONANCE; SILICON NITRIDE;

SPIN DENSITY;

THIN FILM TRANSISTORS;

EID: 0035801165     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(01)01289-5     Document Type: Conference Paper

References (9)