Observation of non-gaussian conductance fluctuations at low temperatures in si:p(b) at the metal-insulator transition

Physical Review Letters

Volumn 91, Issue 21, 2003, Pages

  Kar, Swastik ^a   Raychaudhuri, A K ^a   Ghosh, Arindam ^a   Lohneysen H v ^b   Weiss, G ^b  

^a INDIAN INSTITUTE OF SCIENCE   (India)

^b UNIVERSITY OF KARLSRUHE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRONIC DENSITY OF STATES; LOW TEMPERATURE OPERATIONS; METAL INSULATOR TRANSITION; PROBABILITY DENSITY FUNCTION; SEMICONDUCTOR DOPING; SPECTRUM ANALYSIS; SPURIOUS SIGNAL NOISE; TEMPERATURE;

CRITICAL CONCENTRATION; ELECTRONIC SYSTEM; GLASSY FREEZING; NON GAUSSIAN CONDUCTANCE FLUCTUATIONS;

SEMICONDUCTING SILICON;

EID: 0346421118     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.91.216603     Document Type: Article

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