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Physical Review Letters

Volumn 86, Issue 24, 2001, Pages 5514-5517

Absence of an abrupt phase change from polycrystalline to amorphous in silicon with deposition temperature

(5) Voyles, P M a,b Gerbi, J E a Treacy, M M J b Gibson, J M c Abelson, J R a

a University of Illinois at Urbana Champaign (United States)

b NEC LABORATORIES AMERICA (United States)

c ARGONNE NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; GRAIN BOUNDARIES; MAGNETRON SPUTTERING; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SODIUM CHLORIDE; SUBSTRATES; TEMPERATURE; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

DISCONTINUOUS DISORDER-ORDER PHASE TRANSITION; FLUCTUATION ELECTRON MICROSCOPY; PHASE CHANGE; POLYCRYSTALLINE FILM;

PHASE TRANSITIONS;

EID: 0035844582 PISSN: 00319007 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevLett.86.5514 Document Type: Article

Times cited : (88)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.