Field-Induced Interband Tunneling Effect Transistor (FITET) with negative-differential transconductance and negative-differential conductance

IEEE Transactions on Nanotechnology

Volumn 4, Issue 3, 2005, Pages 317-321

  Kim, Kyung Rok ^a,b   Kim, Hyun Ho ^a   Song, Ki Whan ^a   Huh, Jung Im ^a   Lee, Jong Duk ^a   Park, Byung Gook ^a  

^a Seoul National University   (South Korea)

^b Stanford University   (United States)

Author keywords

CMOS; Degenerate; Field induced interband tunneling effect (FITET); Interband; Negative differential conductance (NDC); Negative differential transconductance (NDT); Quantum tunneling; Silicon on insulator (SOI)

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC CONDUCTANCE; ELECTRONS; LOGIC GATES; SEMICONDUCTOR JUNCTIONS; SILICON ON INSULATOR TECHNOLOGY; THICKNESS MEASUREMENT; TRANSCONDUCTANCE;

CMOS; DEGENERATE; FIELD-INDUCED INTERBAND TUNNELING EFFECTS (FITET); INTERBAND; NEGATIVE-DIFFERENTIAL CONDUCTANCE (NDC); NEGATIVE-DIFFERENTIAL TRANSCONDUCTANCE (NDT); QUANTUM-TUNNELING; SILICON-ON-INSULATOR (SOI);

FIELD EFFECT TRANSISTORS;

EID: 20344389518     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2005.847008     Document Type: Conference Paper

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