Impact of the Lateral Source/Drain Abruptness on MOSFET Characteristics and Transport Properties

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 237-240

  Villanueva, D ^a   Pouydebasque, A ^a   Robilliart, E ^b   Skotnicki, T ^b   Fuchs, E ^b   Jaouen, H ^b  

^a NXP SEMICONDUCTORS   (Netherlands)

^b STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BACKSCATTERING; BAND STRUCTURE; CARRIER MOBILITY; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC FIELDS; GATES (TRANSISTOR); MONTE CARLO METHODS; SEMICONDUCTOR DOPING; THRESHOLD VOLTAGE;

LATERAL DOPING ABRUPTNESS; SHORT CHANNEL EFFECT (SCE);

MOSFET DEVICES;

EID: 0842331391     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

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4. ISE AG, SPARTA
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6. nd edition, Cambridge University Press, 2000.