Impact of extension implant energy purity and angle on the electrical characteristics of a 65 nm device technology

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 4, 2006, Pages 1705-1710

  Gossmann, Hans Joachim L ^a,b   Rubin, Leonard ^a   Parrill, Tom ^a,c   Agarwal, Aditya ^a,d  

^a AXCELIS TECHNOLOGIES   (United States)

^b AMD   (United States)

^c VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES   (United States)

^d ADVANCED MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

65 NM DEVICE TECHNOLOGY; BEAM STEERING; DEVICE CHARACTERISTICS; WAFER;

CONTAMINATION; DECELERATION; DOPING (ADDITIVES); ELECTRIC EQUIPMENT; FORMAL LOGIC; ION BEAMS; ION IMPLANTATION;

NANOSTRUCTURED MATERIALS;

EID: 33746471928     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2209988     Document Type: Article

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