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14th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2006

Volumn , Issue , 2006, Pages 103-110

Flash annealing technology for USJ: Modeling and metrology

(8) Gelpey, Jeff a McCoy, Steve a Camm, David a Lerch, Wilfried b Paul, Silke b Pichler, Peter c Borland, John O d Timans, Paul b

a Mattson Technology Canada (Canada)

b MATTSON THERMAL PRODUCTS GMBH (United States)

c FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB (Germany)

d JOB Consulting (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTALS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; INTERNET PROTOCOLS; ION BOMBARDMENT; ION IMPLANTATION; PLASMAS; POLYSILICON; RAPID THERMAL ANNEALING; SEMICONDUCTOR MATERIALS; SIMULATED ANNEALING;

ACCURATE SIMULATIONS; ADVANCED TECHNOLOGIES; DEFECT EVOLUTIONS; DEVICE DESIGNERS; DOPANT DIFFUSIONS; ELECTRICAL ACTIVATIONS; EXTENDED DEFECTS; FLASH ANNEALING; FLASH LAMP ANNEALING; FLASH LAMPS; IN PROCESSES; JUNCTION FORMATIONS; JUNCTION LEAKAGES; MILLISECOND ANNEALING; PATTERN EFFECTS; PROCESS ENGINEERS; PROCESS SIMULATIONS; SHALLOW JUNCTIONS; WAFER STRESSES;

SEMICONDUCTOR JUNCTIONS;

EID: 48349141893 PISSN: None EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/RTP.2006.367988 Document Type: Conference Paper

Times cited : (4)

References (14)

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- M.Current, Analysis of Doping and Damage Effects after ms-Anneals with Non-Contact Measurements of Sheet Resistance and Leakage Current, WCJT Workshop, July 2006
- M.Current, Analysis of Doping and Damage Effects after ms-Anneals with Non-Contact Measurements of Sheet Resistance and Leakage Current, WCJT Workshop, July 2006

14
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- J.Borland, S.Shishiguchi, A.Mineji , W.Krull, D.Jacobson, M.Tanjyo, Wilfried Lerch, S.Paul, J.Gelpey, S.McCoy, J.Venturini, M.Current, V.Faifer, R.Hillard, M.Benjamin, T.Walker, A.Buczkowski, Z.Li and J.Chen, Ion Implant Technology Conference 2006
- J.Borland, S.Shishiguchi, A.Mineji , W.Krull, D.Jacobson, M.Tanjyo, Wilfried Lerch, S.Paul, J.Gelpey, S.McCoy, J.Venturini, M.Current, V.Faifer, R.Hillard, M.Benjamin, T.Walker, A.Buczkowski, Z.Li and J.Chen, Ion Implant Technology Conference 2006

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.