Fundamental aspects of low-temperature growth of microcrystalline silicon

Thin Solid Films

Volumn 430, Issue 1-2, 2003, Pages 130-134

  Kondo, Michio ^a   Fujiwara, Hiroyuki ^a   Matsuda, Akihisa ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Epitaxy; Growth; Hydrogen; Microcrystalline silicon

Indexed keywords

COMPRESSIVE STRENGTH; CRYSTAL GROWTH FROM MELT; GAS DYNAMICS; HYDROGEN BONDS; NUCLEATION; POLYCRYSTALLINE MATERIALS; SURFACE REACTIONS;

LIGHT EMISSION SPECTROSCOPY;

POLYSILICON;

EID: 0037850859     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)00093-2     Document Type: Conference Paper

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