Ultrahigh-speed etching of SiO2 with ultrahigh selectivity over Si in microwave-excited non equilibrium atmospheric pressure plasma

Applied Physics Letters

Volumn 85, Issue 4, 2004, Pages 549-551

  Yamakawa, Koji ^a   Hori, Masaru ^a   Goto, Toshio ^a   Den, Shoji ^b   Katagiri, Toshirou ^b   Kano, Hiroyuki ^c  

^a NAGOYA UNIVERSITY   (Japan)

^b Department of Engineering   (Japan)

^c NU EcoEngineering Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHARGE COUPLED DEVICES; ETCHING; FLOWMETERS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYGROMETERS; ION BOMBARDMENT; MICROELECTROMECHANICAL DEVICES; MICROMACHINING; POTASSIUM COMPOUNDS;

BARRIER DISCHARGE; BORO-PHOSPHOSILICATE GLASS (BPSG); ULTRAHIGH ETCH RATE; WET ETCHING;

SILICA;

EID: 4043067044     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1775885     Document Type: Article

References (9)

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