Electron-drag effect in Si metal-oxide-semiconductor devices with thin oxide layers

Physical Review B - Condensed Matter and Materials Physics

Volumn 72, Issue 12, 2005, Pages

  Laikhtman, Boris ^a   Solomon, Paul M ^b  

^a HEBREW UNIVERSITY OF JERUSALEM   (Israel)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 29844456301     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.72.125338     Document Type: Article

References (58)

1. P. M. Solomon, P. J. Price, D. J. Frank, and D. C. La Tulipe, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.63.2508 63, 2508 (1989).
2. T. J. Gramila, J. P. Eisenstein, A. H. MacDonald, L. N. Pfeiffer, and K. W. West, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.66.1216 66, 1216 (1991);
3. T. J. Gramila, J. P. Eisenstein, A. H. MacDonald, L. N. Pfeiffer, and K. W. West, Surf. Sci. SUSCAS 0039-6028 10.1016/0039-6028(92)90386-K 263, 446 (1992).
4. T. J. Gramila, J. P. Eisenstein, A. H. MacDonald, L. N. Pfeiffer, and K. W. West, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.47.12957 47, 12957 (1993).
5. H. Rubel, E. H. Linfield, D. A. Ritchie, K. M. Brown, M. Pepper, and G. A. C. Jones, Semicond. Sci. Technol. SSTEET 0268-1242 10.1088/0268-1242/10/9/004 10, 1229 (1995).
6. H. Noh, S. Zelakiewicz, T. J. Gramila, L. N. Pfeiffer, and K. W. West, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.59.13114 59, 13114 (1999).
7. M. Kellogg, J. P. Eisenstein, L. N. Pfeiffer, and K. W. West, Solid State Commun. SSCOA4 0038-1098 10.1016/S0038-1098(02)00426-X 123, 515 (2002).
8. C. Jörger, S. J. Cheng, H. Rubel, W. Dietsche, R. Gerhardts, P. Specht, K. Eberl, and K. v. Klitzing, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.62.1572 62, 1572 (2000).
9. R. Pillarisetty, H. Noh, D. C. Tsui, E. P. De Poortere, E. Tutuc, and M. Shayegan, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.89.016805 89, 016805 (2002).
10. U. Sivan, P. M. Solomon, and H. Shtrikman, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.68.1196 68, 1196 (1992).
11. R. Rubel, A. Fisher, W. Dietsche, C. Jörger, K. von Klitzing, and K. Eberl, Physica E (Amsterdam) PELNFM 1386-9477 10.1016/S1386-9477(97)00035-0 1, 160 (1997).
12. N. P. R. Hill, J. T. Nicholls, E. H. Linfield, M. Pepper, D. A. Ritchie, A. R. Hamilton, and G. A. C. Jones, J. Phys.: Condens. Matter JCOMEL 0953-8984 10.1088/0953-8984/8/39/001 8, L557 (1996);
13. H. Rubel, A. Fischer, W. Dietsche, K. von Klitzing, and K. Eberl, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.78.1763 78, 1763 (1997);
14. X. G. Feng, S. Zelakiewicz, H. Noh, T. J. Ragucci, T. J. Gramila, L. N. Pfeiffer, and K. W. West, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett. 81.3219 81, 3219 (1998);
15. C. Jörger, W. Dietsche, W. Wegscheider, and K. von Klitzing, Physica E (Amsterdam) PELNFM 1386-9477 6, 586 (2000).
16. M. B. Pogrebinskii, Fiz. Tekh. Poluprovodn. (S.-Peterburg) FTPPA4 0015-3222 11, 637 (1977)
17. M. B. Pogrebinskii, [Sov. Phys. Semicond. SPSEAX 0038-5700 11, 372 (1977)].
18. P. J. Price, Physica B & C PHBCDQ 0378-4363 117/118, 750 (1983).
19. K. Flensberg and Ben Yu-Kuang Hu, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.73.3572 73, 3572 (1994);
20. K. Flensberg and Ben Yu-Kuang Hu, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.52.14796 52, 14796 (1995).
21. N. P. R. Hill, J. T. Nicholls, E. H. Linfield, M. Pepper, D. A. Ritchie, G. A. C. Jones, Ben Yu-Kuang Hu, and K. Flensberg, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.78.2204 78, 2204 (1997);
22. N. P. R. Hill, J. T. Nicholls, E. H. Linfield, M. Pepper, D. A. Ritchie, Ben Yu-Kuang Hu, and K. Flensberg, Physica B PHYBE3 0921-4526 249-251, 868 (1998).
23. H. Noh, S. Zelakiewicz, X. G. Feng, T. J. Gramila, L. N. Pfeiffer, and K. W. West, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.58.12621 58, 12621 (1998).
24. M. V. Fischetti and S. E. Laux, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1332423 89, 1205 (2001).
25. M. V. Fischetti, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1332424 89, 1232 (2001).
26. P. M. Solomon and Min Yang, IEEE Electron Devices Meeting, San Francisco CA, Dec. 2004, Technical Digest 6-3.
27. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
28. Numerical Data and Functional Relationships in Science and Technology, edited by, O. Madelung,,, M. Schulz,, and, H. Weiss,, Landolt-Börnstein, New Series, Group III, Vol. 17, Pt. (Springer, New York, 1982).
29. P. M. Solomon and B. Laikhtman, Superlattices Microstruct. SUMIEK 0749-6036 10.1016/0749-6036(91)90154-J 10, 89 (1991).
30. B. Laikhtman and P. M. Solomon, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.41.9921 41, 9921 (1990);
31. A.-P. Jauho and H. Smith, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.47.4420 47, 4420 (1993);
32. A. Yurtsever, V. Moldoveanu, and B. Tanatar, Solid State Commun. SSCOA4 0038-1098 10.1016/S0038-1098(03)00081-4 125, 575 (2003).
33. D. L. Maslov, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.45.1911 45, 1911 (1992).
34. M. Mosko, V. Cambel, and A. Moskova, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.46.5012 46, 5012 (1992);
35. V. Cambel and M. Mosko, Semicond. Sci. Technol. SSTEET 0268-1242 10.1088/0268-1242/8/3/010 8, 364 (1993).
36. H. C. Tso, P. Vasilopoulos, and F. M. Peeters, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.68.2516 68, 2516 (1992).
37. I. I. Boiko, P. Vasilopoulos, and Yu. M. Sirenko, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.45.13538 45, 13538 (1992).
38. A.-P. Jauho and H. Smith, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.47.4420 47, 4420 (1993).
39. L. Zheng and A. H. MacDonald, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.48.8203 48, 8203 (1993).
40. A. Kamenev and Y. Oreg, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.52.7516 52, 7516 (1995).
41. K. Flensberg, Ben Yu-Kuang Hu, A.-P. Jauho, and J. M. Kinaret, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.52.14761 52, 14761 (1995).
42. H. C. Tso, P. Vasilopoulos, and F. M. Peeters, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.70.2146 70, 2146 (1993).
43. L. Swierkowski, J. Szymanski, and Z. W. Gortel, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.74.3245 74, 3245 (1995);
44. L. Swierkowski, J. Szymanski, and Z. W. Gortel, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.55.2280 55, 2280 (1997).
45. A. Yurtsever, V. Moldoveanu, and B. Tanatar, Solid State Commun. SSCOA4 0038-1098 10.1016/S0038-1098(03)00081-4 125, 575 (2003).
46. H. L. Cui, X. L. Lei, and N. J. M. Horing, Superlattices Microstruct. SUMIEK 0749-6036 10.1006/spmi.1993.1043 13, 221 (1993).
47. V. F. Gantmakher and Y. B. Levinson, Carrier Scattering in Metals and Semiconductors (North-Holland, Amsterdam, 1987).
48. C. A. Neugebauer, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1656753 39, 3177 (1968);
49. T. I. Kamins, J. Appl. Phys. JAPIAU 0021-8979 42, 4365 (1971);
50. J. Y. W. Seto, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.321593 46, 5247 (1975);
51. G. Baccarani, B. Ricco, and G. Spadini, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.324477 49, 5565 (1978);
52. J. Levinson, F. R. Shepherd, P. J. Scanlon, W. D. Westwood, G. Este, and M. Rider, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.330583 53, 1193 (1982).
53. T. Ando, A. B. Fowler, and F. Stern, Rev. Mod. Phys. RMPHAT 0034-6861 10.1103/RevModPhys.54.437 54, 437 (1982).
54. M. Chr. Bonsager, K. Flensberg, Ben Yu-Kuang Hu, and A. H. MacDonald, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.57.7085 57, 7085 (1998).
55. F. F. Fang and W. E. Howard, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.16.797 16, 797 (1966).
56. G. F. Giuliani and J. J. Quinn, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.26.4421 26, 4421 (1982).
57. S. T. Pantelides and C. T. Sah, Phys. Rev. B PLRBAQ 0556-2805 10.1103/PhysRevB.10.621 10, 621 (1974).
58. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1361065 89, 5243 (2001).